Abstract
Chemical vapour deposition (CVD) has emerged as the dominant technique to combine high quality with large scale production of graphene. The key challenge for CVD graphene remains the transfer of the film from the growth substrate to the target substrate while preserving the quality of the material. Avoiding the transfer process of single or multi-layered graphene (SLG-MLG) has recently garnered much more interest. Here we report an original method to obtain a 4-inch wafer fully covered by MLG without any transfer step from the growth substrate. We prove that the MLG is completely released on the oxidized silicon wafer. A hydrogen peroxide solution is used to etch the molybdenum layer, used as a catalyst for the MLG growth via CVD. X-ray photoelectron spectroscopy proves that the layer of Mo is etched away and no residues of Mo are trapped beneath MLG. Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch. These results mark a significant step forward for numerous applications of SLG-MLG on wafer scale, ranging from micro/nano-fabrication to solar cells technology.
Highlights
The development of scalable graphene deposition method has been a task urgently pursued by researches working in the graphene field [1,2,3,4]
Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch
We presented an original method to obtain a 4-inch wafer thoroughly covered by MLG avoiding any transfer step and any transfer medium after the growth by Chemical vapour deposition (CVD)
Summary
Filiberto Ricciardella1,4 , Sten Vollebregt , Bart Boshuizen , F J K Danzl, Ilkay Cesar, Pierpaolo Spinelli and Pasqualina Maria Sarro. Abstract attribution to the Chemical vapour deposition (CVD) has emerged as the dominant technique to combine high quality author(s) and the title of the work, journal citation with large scale production of graphene. We report an original method to obtain a 4-inch wafer fully covered by MLG without any transfer step from the growth substrate. Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch. These results mark a significant step forward for numerous applications of SLG-MLG on wafer scale, ranging from micro/nano-fabrication to solar cells technology
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have