Abstract
In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.
Highlights
A high carrier mobility as well as a low sheet resistance
In this study graphene is grown by traditional Chemical Vapor Deposition (CVD) epitaxy using carbon precursor or more accurately by Vapor Phase Epitaxy (VPE)25
Graphene films should have high carrier density as well in order to obtain low sheet resistance levels needed for high frequency applications
Summary
A high carrier mobility as well as a low sheet resistance. These properties can be found in hydrogen intercalated epitaxial graphene on silicon carbide (SiC) substrate. Even though processing ICs on SiC substrate is very challenging, it paves the way for the realization of graphene based high speed data communications. We present results on monolithic mm-wave IC (MMIC) based on epitaxial graphene in high data rate applications in the 90 GHz band. The limiting factor is not the wafer size but the uniformity of available epitaxial graphene resulting in about 70% yield. The fabricated MMIC has different circuits elements capable of receiving and retrieving information embedded in the amplitude and phase of the carrier signal at the rate of 4 Gbps. This work elevates graphene based radio frequency (RF) ICs’ performance to the level that start competing with the existing matured technologies
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