Abstract
Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.
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