Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate.

Xiaoying Huang,Ying Yu,Mujie Rao,Jin Liu,Jiawei Yang,Siyuan Yu,Rongbin Su

doi:10.3390/nano11040930

Abstract

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of , the second-order correlation factor , and an exciton life time of 323 ps under two-photon resonant excitation.

Highlights

Semiconductor quantum dots (QDs), due to its discrete energy levels as artificial atoms, serve as a core element in the emerging application of optoelectronic devices including lasers [1], solar cells [2], and photodetectors [3]
Last three decades have witnessed the rapid development of QDs from concept to reality via advanced molecular beam epitaxial technique, including Stranski–Krastanow (S–K)
Regarding QD production methods, scalability is very important that allowed production of individual, identical QDs deterministically at specific locations on a substrate, and emitting highly coherent, identical photons at exactly the same energy

Summary

Introduction

Semiconductor quantum dots (QDs), due to its discrete energy levels as artificial atoms, serve as a core element in the emerging application of optoelectronic devices including lasers [1], solar cells [2], and photodetectors [3]. Last three decades have witnessed the rapid development of QDs from concept to reality via advanced molecular beam epitaxial technique, including Stranski–Krastanow (S–K). Regarding QD production methods, scalability is very important that allowed production of individual, identical QDs deterministically at specific locations on a substrate, and emitting highly coherent, identical photons at exactly the same energy. QD populations, which strongly impairs the deterministic production of devices based on single QDs, posing a steep challenge to scalability. Site-controlled growth, which addresses spatial randomness, has suffered from defects in previously processed surfaces which diminish the quantum efficiency and coherence of emitted photons [13]. For the S–K growth, In(Ga)As/GaAs QD-based devices have shown great performance as quantum emitters with close to unity quantum efficiency [14,15] and near transform-limited emission [16]

Methods

Discussion

Conclusion