Abstract
Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh2 law which better fits for higher temperatures. The crystal-quality of hexagonal boron nitride (h-BN)/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1 × 1) unit cells and follows the substrate twinning at the millimeter scale.
Highlights
Two-dimensional materials are expected to become important for the application of concepts for platforms and building blocks in electronic devices beyond the silicon technology [1, 2], in nanophotonics [3], in membrane technology [4], for mechanical detectors [5] or as interface systems in electrochemical environments [6]
In the present contribution to this focus on hexagonal boron nitride (h-BN) we report advances and challenges of epitaxial growth of single layer h-BN with chemical vapor deposition (CVD) in ultra-high vacuum (UHV) environment and pick platinum as a prototype growth substrate
The h-BN/Pt(111) system was further investigated with low energy electron microscopy (LEEM) that gave direct insight into the growth kinetics which is based on a nucleation and growth mechanism [12]
Summary
Adrian Hemmi1,3, Huanyao Cun1,3 , Steven Brems2, Cedric Huyghebaert2 and Thomas Greber1,∗ Keywords: hexagonal boron nitride, CVD growth on catalysts, in-situ photoelectron yield measurements, growth kinetics, wafer scale Original Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence.
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