Abstract
A wafer scale investigation of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) fabricated with a 4in. Si CMOS compatible technology is presented in this paper. High performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated HEMT (i-HEMT) were fabricated using thin HfO2 and CVD Si3N4 as the gate and passivation insulator, respectively. Gate and drain leakage currents as well as dynamic I–V trapping were significantly improved with the MIS-HEMT architecture with almost no trade-off to the on-state. Preliminary assessment of the device off-state reliability has been performed at elevated temperatures up to 310°C.
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