Abstract
A feasibility study concerning the application of the SARF technique at wafer level has been performed. The main problem of this type of measurements is the excess noise generated at the point contacts used to supply the lines under investigation with the test current. This problem has been successfully solved by setting up a probe station entirely contained in a shielded box and by supplying the samples under test by means of purposely designed low noise current sources. The background noise of the whole measurement system coincides with that of the system used until now for packaged samples.
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