Abstract
Electron projection lithography (EPL) is one of the principal next-generation lithography technologies for the sub-65 nm regime. To satisfy the stringent resolution requirements, all image placement errors must be characterized and minimized. These include the distortions of the device wafer during exposure. The wafer absorbs beam energy which produces temperature increases and thermomechanical strains that directly contribute to pattern-placement errors, stitching errors between adjacent subfields, and image blur. Thus, CD control and pattern overlay will be directly affected. In this article, the thermomechanical distortions caused by wafer heating in the EPL system have been simulated using finite element models that include the effects of the interaction between the wafer and chuck.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
