Abstract
The paper presents the results of studies of the conditions for the formation of A3B5 compound semiconductors heterointerfaces including InP, InGaAsP and GaAs layers. The heterostructures were grown by molecular-beam epitaxy and were fused by wafer fusion technique. Improvement of planarity and homogeneity over the thickness of heterointerface due to using optimized preliminary preparation of semiconductor wafer surfaces was demonstrated. No additional extended defects such as dislocations were found.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
