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Abstract
We present a technique to measure the interstitial oxygen concentration in monocrystalline silicon directly on 180 μm industrial solar wafers using an appropriate measurement setup. This avoids the material and time consuming fabrication of special thicker samples which are usually necessary for Fourier Transform Infrared Spectroscopy (FTIR) measurements on silicon. We compare the data obtained from wafer samples to results of thicker slices and use the wafer FTIR method to evaluate the impact of high temperature steps on the interstitial oxygen content of silicon wafers.
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