Abstract
In 19nm Flash memory process, the aspect ratio of shallow trench isolation (STI) become large and it gets difficult to fill STI Oxide by conventional CVD film. Perhydro-Polysilazance (PSZ) deposition process because of its good filling ability has been evaluated for better STI fill instead of conventional CVD. But this new process can cause cracks because of its high temperature process. Crack defect is inspected by dark field inspection (DFI) tool of KLA. Transmission electron microscope (TEM) is used to study the profile of wafer edge film. The experiment proved that the crack defect is generally decided by STI Etch profile, annealing temperature of rise and drop and the thickness of PSZ DEP. In this paper, solution of to avoid the crack defect are studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
