Abstract

Abstract Silicon direct bonding is a new technique offering a wide range of applications for sensor technology. Bonding of two oxidized wafers at room temperature and subsequent annealing is the basic process, which allows buried oxide layers to be fabricated. Additional doping or shallow epitaxial deposition permits the introduction of several etch-stop levels. In combination with anisotropic and preferential etch techniques, a variety of applications like thin membrane fabrication, creation of cooling channels in silicon hybrids or production of micromechanical devices are feasible.

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