Abstract
The growth of WTe2 thin films by molecular beam epitaxy is demonstrated for the first time on a variety of 2D substrates including MoS2, Bi2Te3, and graphite. We demonstrate that beam interruption of the metal source enables the growth of crystalline WTe2 films in the distorted octahedral (1T′) phase. As a result of the van der Waals nature of this material, a sharp interface between the WTe2 thin film and the substrate is shown with no evidence of misfit dislocations. In addition, the buckled structure expected for the semi-metallic 1T′ phase is observed with transmission electron microscopy. Raman spectroscopy further confirms the growth of the 1T′ phase and x-ray photoelectron spectroscopy shows the films to be stoichiometric and semi-metallic as expected.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
