W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication

Abstract

This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX) chipsets in a 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe BiCMOS process for high data-rate wireless communication. Both the chips integrate four compact front-end channels in 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 2 distribution, and the distance between the adjacent RF pads is less than 1.8 mm ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.56\lambda $ </tex-math></inline-formula> at 90 GHz) to fit for the tight antenna array and enable array scaling by tiling multiple unit cells. A 6-bit active phase shifter based on the improved phase-inverting variable gain amplifiers is leveraged to achieve high phase-shift precision and bandwidth concurrently. A noise reduction technique using a parallel inductor to resonate with the parasitic capacitors of the cascode transistors is adopted in the low-noise amplifier design. A novel miniature power combiner, which occupies a much more compact area than the Wilkinson power combiner while delivering great RF performance, is proposed and elaborately analyzed. System-level calibration for local oscillator (LO) leakage and dc-offset suppression is enabled by introducing digitally controlled current sources into the up-conversion and down-conversion mixers. On-wafer measurements for the TX chip exhibit a single-channel IF-to-RF conversion gain (CG) of 26 dB, a competitively high output 1-dB compression point (OP <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathrm {1\,dB}}$ </tex-math></inline-formula> ) of 11 dBm. The RX chip achieves an RF-to-IF CG of 19.5 dB with 9-/14-GHz IF/RF 3-dB bandwidth, a noise figure of 7.7 dB, and an input 1-dB compression point of −28 dBm. The phase-shift characteristics are verified by the TX/RX front-end measurements, achieving a 6-bit phase resolution with minimum rms phase/gain error smaller than 0.83°/0.45 dB and a large phase-shift bandwidth higher than 20 GHz. Preliminary wireless transmission test using a low-cost die-on-printed circuit board (PCB) prototype demonstrates wireless data rates of 1.6 and 0.8 gigabits per second (Gb/s) at distances of 0.4 and 1 m with 256-quadratic-amplitude modulation (QAM) and 16-QAM modulated signals, respectively.