Abstract
Ohmic contacts to p-type GaN were fabricated using W2B and CrB2 as diffusion barriers for a traditional Ni∕Au contact scheme. The annealing temperature dependence (25–1000°C) of contact resistance and the thermal aging characteristics at 200°C were examined. A minimum contact resistance of ∼2×10−4Ωcm2 was achieved after annealing at 700°C for 60s. These contacts also showed excellent stability as a function of aging at 200°C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.
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