Abstract
A particular configuration of columnar defects (Gaussian splay) has been installed in a ${\mathrm{YBa}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ single crystal by irradiation with heavy ions. The influence of this kind of splay on the pinning efficiency has been very controversial in the literature. In the present study, the Gaussian splay has been achieved by defocusing the incident ion beam through a metallic foil. Its pinning efficiency has been compared to that of a standard configuration of tracks parallel to the c axis. In the largest part of the H-T plane, it is shown that the persistent current densities are actually higher in the Gaussian splay than in the parallel configuration.
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