Abstract
An analytical description of volume reflection of charged ultrarelativistic particles in bent single crystals is considered. The relation describing the angle of volume reflection as a function of the transversal energy is obtained. Different angle distributions of the scattered protons in single crystals are found. Results of calculations for 400 GeV protons scattered by the silicon single crystal are presented.
Highlights
Volume reflection of charged particles in single crystals represents the coherent scattering of these particles by planar or axial electric fields of bent crystallographic structures
It is thought that this process did not show itself in experimental measurements
In the recent reports [3,4] problems were discussed, which require the existence of the volume reflection effect for explanation of the proton and heavy ion collimation measurements
Summary
Volume reflection of charged particles in single crystals represents the coherent scattering of these particles by planar or axial electric fields of bent crystallographic structures. The recent meetings in CERN [7] which were devoted to problems of utilization of interactions of proton beams with single crystals attract considerable interest to the phenomenon of volume reflection due to new possibilities such as the collimation [8–10] and extraction [11] of collider beams, creation of devises which can multiply the effect [12] and so on. Based on the equations of particle motion in bent single crystals, we find a formula for the angle of volume reflection and analyze its properties. We find relations describing the angle distributions of scattered particles and consider multiple scattering of particles in the body of a single crystal and investigate its influence on the volume reflection characteristics. The reasons are the following: first, these data are treated and unpublished; second, we plan to carry out such a comparison in the frame of a future paper which will be devoted to a detailed description of the CERN experiment results
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