Abstract
ZnO films were prepared by anodic-oxidation of Zn metal plates at various anodic-oxidation conditions. Pr-Co-O thin films having various Co contents were deposited on the ZnO films by radio-frequency (RF) magnetron sputtering for the formation of heterojunctions. Nonlinear properties were observed in voltagecurrent (V-I) characteristics of the heterojunctions, and the threshold voltage shifted to the lower voltage side with increasing Co contents in the Pr-Co-O thin films. The nonlinearity coefficients α in the V-I characteristics became large as about 30 when transparent ZnO films were used.
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