Voltage-assisted SILAR deposition of CdSe quantum dots into mesoporous TiO2 film for quantum dot-sensitized solar cells

Abstract

CdSe quantum dots (QDs) grows slowly in mesoporous TiO2 film deriving from a large lattice mismatch (11%) and poor interaction between the two, which resulting the low power conversion efficiency (PCE) of quantum dot-sensitized solar cells (QDSSCs). An external voltage is applied in the successive ionic layer adsorption reaction (SILAR) process, which drives the Cd2+ and SeSO32− ions quickly diffused into the mesoporous TiO2 film and reacted to form CdSe QDs at room temperature. The CdSe QDSSCs yields a PCE of 3.27%. This work provides an efficient strategy to assemble QDs for enhancing the performance of QDSSCs.