Abstract
S-type negative differential conductivity and relaxation oscillations in a single-barrier n−-GaAs/Al0.34Ga0.66As/n+-GaAs heterostructure hot-electron diode are studied experimentally and by ensemble Monte Carlo simulations at 300 and 77 K lattice temperature. The influence of interband impact ionization on the instability is investigated. The frequency is found to be limited by a slow electron dispersal from the accumulation layer adjacent to the n−-GaAs/Al0.34Ga0.66As interface to less than 10 GHz. The maximum frequency of the oscillations observed experimentally was about 0.5 GHz on account of the parasitic capacitance of the investigated device structure.
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