Abstract
A method of refining electron beam voltage from deficit line intersections, using a quasi-kinematic scattering approximation, is described and applied to a silicon standard. It is shown that dynamical corrections are necessary for higher-index zone axes, such as 310 and 411, where a single deficit line associated with one dominant Bloch state is visible. This leads to a substantial difference in the refined voltage compared with that obtained from a purely kinematic approximation. Neglect of this dynamical correction term effectively invokes a systematic error that may lead to high precision but poor accuracy in higher-order Laue zone measurements of beam voltage or lattice parameters. Although relatively small, differences in the dynamical correction necessary for these two zones are confirmed experimentally for 100-300 keV electrons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
