Voltage Reduced Self Refresh (VRSR) for optimized energy savings in DRAM Memories

Abstract

Modern computing systems demand DRAMs with more capacity and bandwidth to keep pace with the onslaught of new data-intensive applications. Though DRAM scaling offers higher density devices to realize high memory capacity systems, energy consumption has become a key design limiter. This is owing to the fact that the memory sub-system continues to be responsible for a significant fraction of overall system energy. Self-refresh mode is one low power state that consumes the least DRAM energy, and this is an essential operation to avoid data loss. However, self-refresh energy also continues to grow with density scaling. This paper carries out a detailed study of reducing self-refresh energy by reducing the supply voltage. PARSEC benchmarks in Gem5 full-system mode are used to quantify the merit of self-refresh energy savings at reduced voltages for normal, reduced, and extended temperature ranges. The latency impacts of basic operations involved in self-refresh operation are evaluated using the 16 nm SPICE model. Possible limitations in extending the work to real hardware are also discussed. As a potential opportunity to motivate for future implementation, DRAM architectural changes, additional low power states and entry/exit flow to exercise reduced voltage operation in self-refresh mode are proposed. We present this new low power mode as Voltage Reduced Self-Refresh (VRSR) operation. Our simulation results show that there is a maximum of ∼12.4% and an average of ∼4% workload energy savings, with less than 0.7% performance loss across all benchmarks, for an aggressive voltage reduction of 150 mV.