Abstract
Abstract With scanning tunneling spectroscopy (STS), we have recorded voltage-dependent differential conductance (dI/dV) images of P3HT:PCBM bulk-heterojunctions (BHJs). Since the materials are seen “energetically” in dI/dV images, the imaging process has provided opportunities to view the nano-domains of the components in the BHJ. When the images were recorded at different voltages, energy-levels at the interface region between two hetero-domains could be viewed energetically. As such, the density of states (DOS) spectra of pristine materials provided location of energy levels of the polymer and the fullerene in forming energy diagram with a type-II alignment from the view-point of charge carriers. DOS spectra recorded in the P3HT:PCBM heterojunction in addition yielded energies that deviated from those of the components in the BHJ. These energies along with bias-dependent dI/dV images evidenced that the interface region between P3HT and PCBM domains possessed energy levels intermediate to those of the components.
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