Voltage-Controlled Magnetic Anisotropy in Heterostructures with Atomically Thin Heavy Metals

Abstract

Efficient, fast, high-density magnetoelectric random-access memory (MeRAM) requires both large perpendicular magnetic anisotropy and high-efficiency voltage-controlled magnetic anisotropy. Thus the authors propose a double-barrier ferromagnetic heterostructure with an atomically thin layer of a late transition metal $X$ (Rh, Ir, or Pt). First-principles calculations reveal its anticipated performance to be due to the synergy effects of the large strain-induced magnetism in $X$, the large spin-orbit coupling of $X$, and the giant modulation of magnetocrystalline anisotropy at the $X$/MgO interface. This work provides rules for designing the next generation of spintronic memory devices.