Abstract
The central challenge in realizing multi-level storage lies in seeking an effective way to switch between distinct states with a controllable variable, in a reversible and reproducible manner. In this paper, with the introduction of different voltage pulses, nonvolatile bistable resistance states have been obtained in a Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 heterostructure. In addition, two types of resistive switching behaviors, diode-like features and traditional symmetric variations, are realized by tuning the value or direction of voltage. The resistive switching behavior is improved by inserting a Ni05Zn0.5Fe2O4 film. Good stability, excellent retention, and anti-fatigue characteristics are demonstrated at the same time. The observed bistable memory properties are attributed to modulation by the ferroelectric polarization reversal at the BiFeO3/Nb:SrTiO3 interface. Ni-Zn ferrite film layers can effectively increase the ferroelectric polarization of the sample, which eventually leads to an improvement in stability and durability. The present results further enhance the applicability of BiFeO3-based multifunctional materials in nonvolatile multi-level memory devices.
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