Abstract
It is shown theoretically that in a layered heterostructure comprising piezoelectric, dielectric antiferromagnetic crystal, and heavy metal (PZ/AFM/HM), it is possible to control the anisotropy of the AFM layer by applying a dc voltage across the PZ layer. In particular, we show that by varying the dc voltage across the heterostructure and/or the dc current in the HM, it is possible to vary the frequency of the antiferromagnetic resonance of the AFM in a passive (subcritical) regime and, also, to reduce the threshold of the current-induced terahertz-frequency generation. Our analysis also shows that, unfortunately, the voltage-induced reduction of the generation threshold leads to the proportional reduction of the amplitude of the terahertz-frequency signal generated in the active (supercritical) regime. The general results are illustrated by a calculation of the characteristics of experimentally realizable PZT-5H/$\mathrm{Ni}\mathrm{O}$/$\mathrm{Pt}$.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
