Abstract
We describe a model device allowing voltage control of the magnetic properties of magnetic ions in III-V self-assembled semiconductor quantum dots. The applied voltage, combined with Coulomb blockade, allows the control of the number of holes in the quantum dot. The spins of the holes interact with the spins of the magnetic ions via $\mathit{sp}\text{\ensuremath{-}}d$ exchange interactions. The spectrum of a Mn ion in a $p$-type InAs quantum disk in a magnetic field is calculated as a function of the number of holes described by the Luttinger-Kohn Hamiltonian. For a neutral Mn acceptor, the spin of the hole leads to an effective magnetic field which strongly modifies the magnetization of the ion. The magnetization can be modified further by charging the dot with an additional hole. The interacting holes form a singlet parity ground state, suppress the effective field and modify the magnetic moment of the charged complex.
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