Abstract
AbstractThe electric field is an energy‐efficient tool that can be leveraged to control spin–orbit coupling. Although Dzyaloshinskii–Moriya interactions (DMI) in magnetic skyrmion systems can be regulated in flat state using an electric field, the control of their flexible behavior has remained elusive so far. Here, the double modulation of strain and voltage effects in a flexible ultrathin heavy metal (HM)/ferromagnetic (FM)/insulator (I) system, demonstrating that the interfacial DMI can be dual controlled via a mechanical stress and a circuit gating voltage at room temperature, is reported. An intensive tuning efficiency (26.7 mJ m−2 V−1) is obtained while maintaining an excellent mechanical strength, which is a result of Rashba‐DMI tuning at the FM/I interface. The result is promising in achieving novel flexible topological devices where low operation voltage and excellent flexibility are required.
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