Abstract
Emission of electrons from localized electron states in InAs/GaAs self-organized quantumdots (QDs) grown by MOCVD has been studied by a combination of steady-statevoltage–capacitance and admittance techniques. We have found a fine structure of carrierconcentration profile in the area of QDs, which may be attributed to ground and excitedenergy states of electrons in the QDs. The total range of activation energies detected in theadmittance investigations extends from 20 meV up to 140 meV and testifies to thesignificant inhomogeneous broadening of the density of state function due to the QDscattering in geometric sizes.
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