Abstract
Transition metal dichalcogenides (TMDs) are attaining a lot of attention these days in sensing applications due to their unique properties like bandgap, high surface-to-volume ratio, and low power consumption. In this paper, a MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> based field-effect transistor (FET) gas sensor is designed and simulated in COMSOL Multiphysics for different volatile organic compounds (VOCs). MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> of thickness 0.7 nm is used as channel material to sense the target VOCs. When the MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> monolayer is exposed to target VOCs the adsorption of gas vapors increases the drain current due to this, the electrical conductivity of the device changes. The input-output and transfer characteristics of MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FET are simulated in the presence of target gases. In addition, the sensitivity, selectivity, and stability of the VOC sensor for different target VOCs are presented. The proposed sensor provides high sensitivity and selectivity toward ethanol vapors.
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