Abstract
The dominant mode of transition metal contamination in atmospheric pressure chemical vapor deposition reactors constructed from a Cr‐containing Ni alloy was found to be the generation of volatile Cr‐containing species that condense on processed wafers. These compounds are generated in detectable amounts from hot surfaces in a test apparatus at temperatures as low as 400°C. Tests indicate that the predominant volatile species generated in an oxidizing ambient containing oxygen and water vapor is , in accordance with published literature. Controlled oxidation of reactor components made from an Al‐containing Ni‐based alloy has been found to produce a pure , surface oxide, reducing the generation rate of volatile Cr‐containing species by at least three orders of magnitude at temperatures up to 575°C. Installation of a wafer conveyor belt made from an alumina‐forming Ni alloy in a working atmospheric pressure chemical vapor deposition reactor in place of a belt made from a chromia‐forming alloy reduced volatile Cr contamination levels on processed silicon wafers by as much as three orders of magnitude to about 1010 atom/cm2. This result demonstrates the compatibility of semiconductor processing equipment fabricated from alumina‐forming Ni‐based alloys with metal contamination levels acceptable for sub‐0.25 μm device geometries.
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