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Abstract
Shaped sapphire crystals were grown from the melt by the Stepanov (EFG) technique. High-temperature vacuum annealing of crystals grown in a reducing atmosphere, performed by employing graphite elements in the heater unit of the crystallization chamber, led to the formation of voids of two different types: (1) well-faceted voids which are the result of vacancy coagulation and (2) pores of irregular form which decorate the subgrain boundaries. The formation of these defects may be prevented by suppressing the interaction between the alumina melt and carbon.
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