Abstract
Void formation during thermal decomposition of a thin oxide layer on the Si(110) surface was investigated using high-temperature scanning tunneling microscopy. In the initial stage, oxide layer edges neighbored void perimeters, and (17 15 1) and (17 15 3) facets appeared in void surfaces. The facet orientation changed from (17 15 1) to (17 15 3) and from (17 15 3) to (17 15 1) as the voids extended. During oxide decomposition, the (110) surface appeared on void bottoms and around the voids, and only the (17 15 1) facet remained on the void sides. Si crystals were grown in the voids by selective epitaxial growth.
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