Abstract
A hermetic wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding was investigated to explore the sensitivity of selected process parameters with regard to voiding and possible reduction of strength. Little or no variation was observed in the void density as a result of modifying the plated Sn-thickness, the storage time between plating and bonding, the bonding tool pressure, or the thermal budget during bonding. All shear tested samples showed excellent shear strength, with an average of 110 - 164 MPa. Some statistically significant differences in shear strength were found between the varied process parameters. However, the differences were too small to be critical for the application. Analysis of fracture surfaces showed that shear strengths in the lower range corresponded to fracture between the adhesion layer (TiW) and the silicon cap, while shear strengths in the higher range corresponded to fracture in the Cu3Sn formed during the bonding. The results indicate that the bonding process is robust with regard to the studied process parameters.
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