Abstract
Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH3 pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors.
Highlights
We demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods
We introduced a low V/III ratio and NH3 pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor
Conventional Al-polar AlN and polarity selective epitaxial (PSE) AlN were grown on a 0.2○ off-angle c-plane sapphire substrate using the HT-MOCVD (Top Engineering, PHAETHON 100U) system
Summary
ARTICLES YOU MAY BE INTERESTED IN Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice Applied Physics Letters 118, 262101 (2021); https://doi.org/10.1063/5.0048656 High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN Applied Physics Letters 118, 112104 (2021); https://doi.org/10.1063/5.0042857 AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire Applied Physics Letters 112, 041110 (2018); https://doi.org/10.1063/1.5010265
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