Abstract
VO2 thin films were fabricated by thermal evaporation of V2O5 on quartz and glass and subsequent reduction in nitrogen (N2). This Physical Vapor Deposition (PVD) method resulted in high-quality single phase VO2(M1) films with sharp changes in resistance (3–4 orders of magnitude) and transmittance (40–45%) at λ= 1550 nm accompanied by narrow hysteresis loops (~ 4–5 K) around the Semiconductor-to-Metal Transition (SMT).
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