Abstract
ABSTRACTPosition-controlled InP nanowires (NWs) with separations of 10-100 μm were grown by the vapor-liquid-solid (VLS) method using Au-deposited SiO2-mask-patterned InP substrates. Excess indium species diffused from the large mask region formed plural tilted NW-like structures from single openings in addition to the vertical VLS NWs formed by Au catalyst. The introduction of HCl gas during the NW growth was found to efficiently suppress the tilted NW-like structures. Vertical InP NWs without anomalous growth were successfully formed by controlling the HCl flow rate. Moreover, single InP/InAsP/InP quantum wells (QWs) with wurtzite crystal phase structure were epitaxially grown on the sidewall of the position-controlled InP NWs, and two-dimensional arrayed patterns of photoluminescence (PL) coming from the radial QWs were clearly observed in the 1.3-μm wavelength region at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
