Abstract
Direct evidence for the presence of a CuO structure in the grain boundaries of Cu2O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu2O. The suppression of CuO formation at the Cu2O grain boundaries is identified as the key strategy for future device optimization.
Highlights
Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity
High resolution transmission electron microscopy (TEM) based automatic phase mapping was used to identify the crystal structure at the grain boundaries of Cu2O thin films deposited by aerosol assisted metal organic chemical vapor deposition (AA-MOCVD) with a pointto-point resolution of 0.25 nm
The Cu2O thin films were deposited in a homemade aerosol assisted metal organic chemical vapor deposition (AA-MOCVD) system
Summary
Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity.
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