Abstract
AbstractScrew and linear dislocations are investigated on the (0001) planes of GaSe crystals. From the measured parameters of the regular growth spirals, calculations are made of the critical nuclear radius, the supersaturation, and the step translation rate. An optimum chemical etching solution (1 HF + 2 HNO3 + 7 HCl) for the (0001) plane of GaSe crystals is established. The density of screw and linear dislocations is determined. The statistical density of screw dislocations is found to be less than 104 cm−2, whilst the density of linear dislocations varies from 2.3 × 105 to 1.3 × 106 cm−2 depending on the mode of rotation.
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