Abstract
Visibly transparent metal oxide diodes were fabricated using p-type doped zinc oxide on tin doped indium oxide coated substrates by sol-gel solution processing. The influence of various nitrogen doping concentration on the hole carrier concentration and the device operation of the diodes was investigated. The diodes exhibit high optical transmission in the visible spectra and high on/off ratios at low operating voltages. The operation is limited by the low hole carrier concentration, which affects the ideality factor and the series resistance of the diode. The influence of the carrier concentration on electronic properties of the diode will be discussed.
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