Abstract
We report visible single-photon emission from a nitrogen impurity center in AlAs grown on GaAs(001). Sharp emission lines are observed at 2.1–2.2 eV, below the X-conduction bandedge of AlAs from N δ-doped AlAs. The quadratic increase in the photoluminescence intensity with the N concentration reveals that the nitrogen impurity centers consist of NN pairs. Polarization analysis reveals that the peak at 2.191 eV consists of different pair configurations, while the peak at 2.165 eV contains only a single pair configuration along the 〈110〉 direction. Photon correlation measurement gives the second-order correlation function g(2)(0) = 0.33, demonstrating single-photon statistics in emissions from an NN pair.
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