Abstract
We report operation of a new surface-emitting laser. This epitaxial laser is fabricated with molecular beam epitaxy by the growth of quarter-wave high reflectors of AlAs/Al0.4Ga0.6As (710 Å/630 Å) which surround a 4.5-μm-thick multiple quantum well of GaAs/Al0.4Ga0.6As (100 Å/200 Å). We characterize the structure with cw spectroscopy (absorption, reflection, and luminescence) and investigate stimulated emission spectra under pulsed photopumping. When photopumped, the structure lases in its as-grown condition without need of substrate removal, cleaving, or heatsinking. The lasing wavelength is as short as 7400 Å and can be tuned to as long as 8400 Å by positioning the pump spot to different regions across the wafer. The pulsed threshold irradiance has a very weak temperature dependence varying from 6×105 W/cm2 at 4.2 K to 1.6×106 W/cm2 at 295 K.
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