Abstract
AbstractMeasurements of the visible photoluminescence and the decay of the photoluminescence, performed at different temperatures on porous silicon films, prepared by the anodization process under different conditions on (100) p‐type silicon wafers are reported. A separation of the broad visible band of the photoluminescence in two subbands with maxima situated at 1.54 and 1.72eV at room temperature related to the preparation conditions is obtained. This separation is still present at low temperatures but is very weak. The PL decay process is well described by a bimolecular recombination. The decay time α−1 is in the order of microseconds at room temperature and nanoseconds at liquid nitrogen temperature.
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