Abstract
At 5.8eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950nm supports the case for a lower bandgap in this material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
