Abstract
We report pseudodielectric function data 〈ε〉=〈ε1〉+i〈ε2〉 of Zn1−xMgxSe and Zn1−xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ε〉, from which the bowing parameters and spin-orbit-splitting Δ1 of the E1 and E1+Δ1 gaps were obtained. A transfer of oscillator strength from E1+Δ1 to E1 with increasing Mg and Be composition and a positive bowing of these threshold energies are attributed to the k-linear interaction, which is large in small-band gap semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
