Abstract
The fabrication technologies and the properties of light-emitting devices based on Al-porous silicon (PS) Schottky junctions have been developed. Bright light emission, visible by the naked eye at normal daylight, is observed at the edge of the electrodes under reverse bias.The electroluminescence (EL), starting voltage is in the range 5–18 V, depending on the doping level of Si substrate. The current level at which the EL starts is around 1 mA for devices of 2.3 × 10−3 cm−3 area. The light emission intensity increases with increasing current density. EL spectra were broad, covering the whole visible range.The time stability was excellent for all tested devices: the EL intensity did not show remarkable changes, even after more than ten days of continuous light emission at voltages lower than thermal breakdown.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
