Abstract
Visible light emission strong enough to be seen with the naked eye was obtained at room temperature from the Si-doped SiO2 thin films deposited on Si substrates by cosputtering of Si and SiO2 when they were annealed in Ar at high temperature. The luminescence model with radiative recombination centers at the surface of a Si nanocrystal and nonradiative recombination centers in SiO2 has been developed to explain the results of the combined x-ray diffraction and photolumines cence measurements.
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