Abstract
Dye sensitization is an alternative strategy to improve photoelectric activity of semiconductors and, particularly, to enhance the activity towards visible light domain. Herein, an artificial Z-scheme bipyridine ruthenium (Ru(bpy)32+) sensitizing narrow-gap bismuth oxy-iodide (BiOI) microspheres was constructed by a simple electrostatic interaction strategy for the first time. The electrochemical impedance spectroscopy (EIS) and photoluminescence (PL) analysis showed that this design of such Z-scheme structure was helpful to enhance the interfacial charge transfer and improve the photoelectric conversion efficiency. In addition, due to the sensitization of Ru(bpy)32+, the band gap was narrowed from 1.8 eV of BiOI microspheres to 1.3 eV of BiOI/Ru(bpy)32+ microspheres, leading to improve the utilization of visible light. So that, the photocurrent of the resulted BiOI/Ru(bpy)32+ was 13.0 times that of pure BiOI microspheres. In view of the outstanding photoelectrochemical (PEC) performance of BiOI/Ru(bpy)32+ and the high specificity of the aptamer, the PEC aptasensor for ampicillin (AMP) merits the excellent detection performance including a broad linear ranging from 1 × 10–7 nM to 100 nM as well as a low detection limit of 3.3 × 10–8 nM (S/N = 3). This work not only provides a novel way to construct and design highly efficient photoactive materials for PEC detection, but also broadens the application of Z-scheme in the field of sensing.
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