Abstract
This letter reports the electrical and optoelectronic properties of an Au/MoS2/Au structure-based metal-semiconductor-metal (MSM) device fabricated on the p-type silicon (p-Si) substrates. A simple vapor-phase transport (VPT) technique is used to deposit a seamless 2D few-layered MoS2 thin-film on the p-Si substrate and the process is facile, scalable and can be extended for other 2D materials to integrating them with Si. Structural characterizations of MoS2 film on p-Si showed a few-layer 2D-MoS2 film grown seamlessly over a large area of ∼15 mm × 15 mm as confirmed using Raman mapping and HRTEM. The photocurrent measurement of the device under exposure of a monochromatic light (∼775 nm) of 20 μW/cm2 intensity gives the maximum responsivity of 8.26A/W at −3 V operating bias voltage. The results show that the 2D MoS2 films grown on Si substrates can be explored for developing CMOS compatible photodetector applications.
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