Abstract
A high-power light-emitting diode (LED) panel-lamp connected in series with a low-complexity modulation circuit using metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed for an indoor visible-light communication system. The MOSFET modulation circuit consists of a high-speed MOSFET and a shunt resistor, in which the MOSFET gives a variable load driven by the data bit stream and the shunt resistor can tune the modulation depth of the transmitter. In addition, only focusing optical lens is employed in the receiver but no collimation optical lens is adopted in the transmitter to increase the working area. Although the largest data rate is limited to 2 Mbps, the longitudinal communication distances is as long as 6 m; moreover, the maximum horizontal distance is up to 5 m (~ 78.5 m2 in area) along with 3 m in longitudinal distance at the data rates of 1 Mbps. Compared with the traditional Bias-Tee configuration, the proposed MOSFET configuration leads to a lower data rate but a higher modulation depth as well as much larger working area. To the best of our knowledge, this is the largest working area at such a high data rate with on–off-keying using a single LED luminary without collimation optical lens. The system has the inherent ability to realize pulse amplitude modulation (PAM). The 4-PAM is demonstrated to double the data rates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
